advanced power n-channel enhancement mode electronics corp. power mosfet low on-resistance bv dss 60v single drive requirement r ds(on) 100m surface mount package i d 3.3a description absolute maximum ratings symbol units v ds v v gs v i d @t a =25 a i d @t a =70 a i dm a p d @t a =25 w w/ t stg t j thermal data symbol value unit rthj-a maximum thermal resistance, junction-ambient 3 62.5 /w data and specifications subject to change without notice rohs-compliant product parameter total power dissipation 2 -55 to 150 operating junction temperature range -55 to 150 linear derating factor storage temperature range continuous drain current 3 2.7 pulsed drain current 1 20 parameter drain-source voltage gate-source voltage continuous drain current 3 201108073-1/4 ap9977gm rating 60 25 3.3 0.016 g2 d2 s2 g1 d1 s1 s1 g1 s2 g2 d1 d1 d2 d2 advanced power mosfets from apec provide the designer with the best combination of fast switching, ruggedized device design, ultra low on-resistance and cost-effectiveness.
electrical characteristics@t j =25 o c(unless otherwise specified) symbol parameter test conditions min. typ. max. units bv dss drain-source breakdown voltage v gs =0v, i d =250ua 60 - - v ?? v dss / ? t j breakdown voltage temperature coefficient reference to 25 : , i d =1ma - 0.04 - v/ : r ds(on) static drain-source on-resistance 2 v gs =10v, i d =3a - - 100 m v gs =4.5v, i d =2a - - 125 m v gs(th) gate threshold voltage v ds =v gs , i d =250ua 1 - 3 v g fs forward transconductance v ds =10v, i d =3a - 6 - s i dss drain-source leakage current (t j =25 o c) v ds =60v, v gs =0v - - 10 ua drain-source leakage current (t j =70 o c) v ds =48v, v gs =0v - - 25 ua i gss gate-source leakage v gs =25v - - 100 na q g total gate charge 2 i d =3a - 6 10 nc q gs gate-source charge v ds =48v - 2 - nc q gd gate-drain ("miller") charge v gs =4.5v - 3 - nc t d(on) turn-on delay time 2 v ds =30v - 6 12 ns t r rise time i d =1a - 5 12 ns t d(off) turn-off delay time r g =3.3 ? v gs =10v - 16 32 ns t f fall time r d =30 -38 ns c iss input capacitance v gs =0v - 510 810 pf c oss output capacitance v ds =25v - 55 - pf c rss reverse transfer capacitance f=1.0mhz - 35 - pf r g gate resistance f=1.0mhz - 1.3 - ?
ap9977gm fig 1. typical output characteristics fig 2. typical output characteristics fig 3. on-resistance v.s. gate voltage fig 4. normalized on-resistance v.s. junction temperature fi g 5. forward characteristic o f fig 6. gate threshold voltage v.s. reverse diode junction temperature 3/4 0 5 10 15 20 25 02468 v ds , drain-to-source voltage (v) i d , drain current (a) t a =25 o c 10v 7.0 v 5.0v 4.5v v g =3.0v 0 5 10 15 20 25 02468 v ds , drain-to-source voltage (v) i d , drain current (a) 10v 7.0v 5.0v 4.5v v g =3.0v t a = 150 o c 70 80 90 100 246810 v gs , gate-to-source voltage (v) r ds(on) (m ) i d =2a t a =25 : 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 -50 0 50 100 150 t j , junction temperature ( o c) normalized r ds(on) i d =3a v g =10v 0.3 0.6 0.9 1.2 1.5 1.8 -50 0 50 100 150 t j , junction temperature ( o c) normalized v gs(th) (v) 0 1 2 3 4 0 0.2 0.4 0.6 0.8 1 1.2 v sd , source-to-drain voltage (v) i s (a) t j =25 o c t j =150 o c
fig 7. gate charge characteristics fig 8. typical capacitance characteristics fig 9. maximum safe operating area fig 10. effective transient thermal impedance fig 11. switching time waveform fig 12. gate charge waveform 4/4 ap9977gm t d(on) t r t d(off) t f v ds v gs 10% 90% q v g 4.5v q gs q gd q g charge 0 2 4 6 8 10 12 14 0 5 10 15 q g , total gate charge (nc) v gs , gate to source voltage (v) i d =3a v ds =30v v ds =38v v ds =48v 10 100 1000 1 5 9 13 17 21 25 29 v ds , drain-to-source voltage (v) c (pf) f =1.0mh z c iss c oss c rss 0.001 0.01 0.1 1 0.0001 0.001 0.01 0.1 1 10 100 1000 t , pulse width (s) normalized thermal response (r thja ) p dm duty factor = t/t peak t j = p dm x r thja + t a r thja = 135 : /w t t 0.02 0.01 0.05 0.1 0.2 duty factor=0.5 single pulse 0.01 0.1 1 10 100 0.1 1 10 100 1000 v ds , drain-to-source voltage (v) i d (a) t a =25 o c single pulse 100us 1ms 10ms 100ms 1s dc
package outline : so-8 millimeters symbols min nom max a 1.35 1.55 1.75 a1 0.10 0.18 0.25 b 0.33 0.41 0.51 c 0.19 0.22 0.25 d 4.80 4.90 5.00 e1 3.80 3.90 4.00 e 5.80 6.15 6.50 l 0.38 0.71 1.27 0 4.00 8.00 e 1.all dimension are in millimeters. 2.dimension does not include mold protrusions. part marking information & packing : so-8 1.27 typ advanced power electronics corp. c detail a a1 a 9977 g m ywwsss package code part numbe r detail a l date code (ywwsss) y last digit of the year ww week sss sequence e b 1 34 5 6 7 8 2 d e1 e meet rohs requirement
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